D882M GR(200-400)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Ta=25℃　　　　　　　　　　　　　　　　　　　　　　　　　　　) unless otherwise specified ELECTRICAL CHARACTERISTICS ( Symbol Parameter 3 .EMITTER Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40 V, IE=0 1 µA Collector cut-off current ICEO VCE= 30 V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6 V, IC=0 1 µA DC current gain hFE VCE= 2 V, IC= 1A 60 Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V Transition frequency fT VCE= 5V, IC=0.1A 400 90 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 www.cj-elec.com 1 F,Mar,2016 Typical Characteristics Static Characteristic 2.5 (A) DC CURRENT GAIN IC COLLECTOR CURRENT IC Ta=100℃ 7mA 6mA 1.5 —— hFE 10mA 9mA 8mA 2.0 hFE 1000 COMMON EMITTER Ta=25 ℃ 5mA 4mA 1.0 3mA Ta=25℃ 100 2mA 0.5 COMMON EMITTER VCE= 2V IB=1mA 0.0 10 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 8 1 VCE (V) 100 VBEsat —— IC 1000 IC Ta=100 ℃ Ta=25℃ IC 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 1 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 (mA) 10 100 COLLECTOR CURREMT Cob/Cib VBE —— 1000 IC VCB/VEB 500 f=1MHz IE=0/IC=0 Cib (pF) (mA) Ta=25 ℃ C IC T= a 25 ℃ CAPACITANCE 100 100 T= a 10 0℃ COLLECTOR CURRENT 3000 (mA) 1000 10 COMMON EMITTER VCE= 2V 0 300 600 900 1200 PC —— 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) 1400 Cob 10 0.1 1 COLLECTOR POWER DISSIPATION PC (mW) 3000 (mA) 2000 100 10 10 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 10 V 20 (V) Ta 1200 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 F,Mar,2016 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Max. Min. 2.380 2.200 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   F,Mar,2016 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 F,Mar,2016